STMicroelectronics and Innoscience Forge Strategic Partnership to Revolutionize GaN Power Market

STMicroelectronics (ST) and Innoscience have announced a groundbreaking collaboration in gallium nitride (GaN) power products, combining their technological and manufacturing strengths to drive innovation and accelerate market adoption of GaN solutions.

Synergistic Partnership for Global Growth

Under the agreement, ST will leverage Innoscience’s front-end GaN wafer production capacity in China, while Innoscience will utilize ST’s international fabrication facilities outside China. This reciprocal arrangement enhances both companies’ GaN product portfolios, strengthens supply chain resilience, and provides greater flexibility in dynamic markets. Additionally, the partnership expands ST’s global market reach, reinforcing its leadership in power semiconductor technologies.

Marco Cassis, President of Analog, Power & Discretes, MEMS, and Sensors at STMicroelectronics, emphasized that this alliance will accelerate ST’s technology roadmap, complementing its established expertise in silicon and silicon carbide (SiC) power devices. Dr. Weiwei Luo, Chairman and Co-founder of Innoscience, highlighted that the collaboration will foster faster and broader adoption of GaN technology across industries.

Company Profiles: Strengths and Capabilities

Headquartered in Zhuhai, China, Innoscience operates two state-of-the-art 200mm GaN-on-Si wafer fabs in Zhuhai and Suzhou, with a current monthly output of ~12,000 wafers and plans to scale beyond 70,000 wafers per month. The company offers a comprehensive portfolio of GaN devices (30V to 900V, including bi-directional configurations) for applications in consumer electronics, data centers, automotive, renewable energy, and industrial systems. Its stringent Quality Management System (QMS) complies with ISO 9001 and IATF 16949 (automotive-grade) standards, ensuring high reliability.

STMicroelectronics, a key investor in Innoscience’s IPO with a $50 million stake (~1.43% ownership), is actively advancing GaN development. By integrating GaN with its SiC leadership, ST strengthens its position in next-generation power solutions for sustainable applications. This partnership solidifies ST’s role as a leading global supplier of wide-bandgap semiconductors.

The Transformative Potential of GaN Technology

As industries demand more efficient, high-performance power systems, GaN—a wide-bandgap semiconductor like SiC—is emerging as a disruptive force. With a bandgap of 3.4 eV (vs. silicon’s 1.1 eV), GaN enables superior performance in high-voltage, high-temperature, and high-frequency applications while minimizing energy losses.

Key Advantages of GaN:

• Higher Efficiency & Power Density: Faster switching speeds and lower conduction losses than silicon MOSFETs.

• Enhanced Thermal Performance: Superior heat dissipation for reliable operation in demanding environments.

• Compact & Lightweight Designs: Enables smaller, more energy-efficient power systems.

Industry Applications:

• Data Centers & AI: Reduces power consumption and thermal load in high-performance computing.

• Electric Vehicles (EVs): Improves charging efficiency and extends battery range in onboard chargers and DC-DC converters.

• Renewable Energy: Optimizes solar/wind power conversion in inverters.

• Consumer Electronics: Powers ultra-fast, compact chargers for smartphones and laptops.

• Industrial & Aerospace: Enhances motor drives, avionics, and mission-critical systems.

This strategic partnership between ST and Innoscience marks a significant milestone in advancing GaN technology, paving the way for smarter, greener, and more efficient power solutions worldwide.